IEEE Transactions on Industrial Electronics Volume: 63 , Issue: 4 , Apr. 2016 , pp. 2103-2110
Dynamic On-State Resistance Measurement of GaN-HEMT by Double Pulse Test
Demonstrate the dynamic on-state resistance of GaN-HEMT and estimate inpact of loss of devices.
A gate Driver Maximizing the Switching Capability of SiC MOSFETs
This study report that high speed switching gate drive circuit for SiC MOSFETs. The provided gate drive circuit adapted subsidery capacitor in order to add gate voltage, enables increase gate current. This allows fast charge and discharge and reduced switching losses. This study confirmed that the provided gate drive circuit reduce switching loss compared to conventional one.
Dynamic Measurement Method to Extract High Voltage and High Current I-V Characteristics of SiC MOSFET with Reduced Self Heating
A novel measurement method to extract high voltage and high current I-V characteristics (HVHC I-V)of SiC MOSFET is proposed in this paper. The method could extract the HVHC I-V with extremely reduced self heating of the device. By using the method, we can measure higher voltage and current I-V characteristics than those extracted by the conventional method. It is possible for us to measure the HVHC I-V of the next generation SiC MOSFET, whose rated volatge and current is more than those of the conventional device.
Switching behavior based method to estimate the intrinsic gate resistance of a transistor by using gate plateau voltage
The internal gate resistance of SiC MOSFET effects its switching behavior larger than Si devices because it can switch at high speed with low external gate resistance. However, the convention mesurement method of internal gate resistance is not accurate. Then, we devised the new measurement method of it at switching operation by the switching waveforms.
Measurement scheme to model an SiC MOSFET for simulating its switching behaviors
The precise modeling of SiC MOSFETs are difficult by means of conventional modeling method of Si devices because of the device characteristics. Then, we invented the new modeling method for SiC MOSFETs which can reproduce its switching behavior precisely.
Thermal Warpage Behavior Analysis of Semiconductor Package of Semiconductor Packaging Structure
20th Annual International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE2019)
A High Efficiency 3-Phase 400V 15kW Power Inverter Using SiC MOSFETs and Trans-Linked Topology
A 3-phase15kW using SiC MOSFETs and trans-linked topology achieved maximum efficiency of 99.2%, and verified the benefit of combining SiC MOSFET with trans-linked technology.
A Study of Adhesion Interface about Die Bonding Structure with Conductive Silver Paste
IEEE CPMT Symposium Japan 2018
Influence of porosity on Tensile Mechanical Properties of Sintered Porous Silver Films
This paper investigates the porosity-dependent tensile mechanical properties of porous 8-10 μm thick silver films. The silver films are fabricated by pressure press, the variety of which changes the porosity (p) ranging 5% to 25%. p is determined by use of scanning electron microscopy cross-section images of the films. Stress-strain (S-S) curves are obtained by tensile tests performed for the porous and bulk silver films.Breaking strain and Ultimate tensile strengh decrease almost linearly with increase of p.
MNC 2018, 31st International Microprocesses and Nanotechnology Conference
Application of PZT thin film devices to realize IoT society
A number of IoT applications are rapidly growing. Among others, smart factory, smart infrastructure and digital medicine/health are major IoT markets. ROHM also succeeded in demonstration of healthcare monitoring utilizing non-volatile PZT devices. The essentials for IoT society and ROHM’s device applications of PZT thin film were described.
The 12th Japan-Korea Conference on Ferroelectrics (JKC-FE12)
A Trans-Linked 5-kW Inverter Using SiC MOSFETs to Achieve Fan-less Operation
A trans-linked 5kW interleaved inverter using SiC MOSFETs drastically reduced both tansistor loss and reactor losses, resulting in high efficiency over 99% and fanless operation.
Electro-Thermal Simulation for Predicting the Temperature of SiC Dies in the Power Module of a High Frequency Operating Power Converter
The accurate electro-thermal simulation is presented by using a new SiC die model to predict the power loss and temperature of SiC MOSFET dies in a power module. The new model incorporates a temperature dependent I-V model and body diode model which is dependent on the gate-voltage. The simulation using the model yields an accurate power loss and temperature estimate of the SiC module in a buck converter.
S-parameter Based Simulation Modeling a Power Module Independent of Measurement Data
S-parameter based simulation model for power module (PM) except for the semiconductor chips was created with electromagnetic simulation. This PM model was combined with the chip model in order to build the model of the whole structure. As a result of verifying the model by the double pulse test, the simulation waveforms which reproduce the measurement results well were obtained.
Application of PZT thin film devices to realize IoT society
ROHM has developed PZT thin film devices, such as non-volatile ferroelectric memory, highly-sensitive sensors, highly-accurate actuators, high-speed space light modulators and ultra-low-power-consumption non-volatile flip-flop devices so far. ROHM also succeeded in demonstration of healthcare monitoring utilizing non-volatile PZT devices (memory and logic). In this presentation, ROHM’s device applications of PZT thin film were described.
A Newly Developed high performance PZT thin films by using sputtering and sol-gel hybrid method for Piezo-MEMS device
We have proposed a new hybrid structure of the PZT film which we made by sol-gel method of construction on the PbTiO3 seed layer made by rf magnetron sputtering. These hybrid PZT films showed high (100)/(001) orientation and had high breakdown voltage.
Circuit Simulation of a Silicon-Carbide MOSFET Considering the Effect of the Parasitic Elements on Circuit Boards by Using S-parameters
The high speed switching of SiC MOSFET is affected by the parasitic elements of circuit board. Therefore, we analyzed the impact of stray capacitance in circuit board on the switching behavior and tried circuit simulation of the effect by use of precise model and electromagnetic simulation results of circuit board.
Resonant Tunneling Diodes for THz Applications
Present the recent advance of RTD-based terahertz devices. Based on a well-defined equivalent circuit model, circuits like mixer, detector, and oscillators have been integrated.
800 V Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs
This study report that a three-phase, 5-kW LLC series resonant dc/dc converter utilizing SiC MOSFETs. The high-break down voltage of SiC MOSFETs, enables increasing the input voltage up to 800 V. Around 160kHz switchig frequency successfully reduces the volume of isolation transformers. Current-balancing transformers among each phases effectively suppress a peak current from arising in the circuit and contributed that miniaturizes the input and output capacitances. The proposed power supply weighs 1.55 kg with dimensions including a width of 18 cm, a length of 12 cm, and a height of 12.5cm. The conversion efficiency of the converter reaches 98.1% at 5-kW operation.
Demonstration of a robot finger using dielectric elastomer actuator
Self-Sustained Oscillation in Half Bridge Circuit of Silicon Carbide Devices with Inductive Load
The self-sustained oscillations are sometimes obserbed when SiC MOSFETs switch at high speed in the half bridge configuration. The oscillation is regard as nonlinear self-excited oscillation as a result of its device characteristics. We tried to analyze it from the aspects of device characteristics of MOSFET and trajectory of the oscillation in the I-V plane.
澤井 泰 (鶴見が発表)
Terahertz-wave integrated circuits based on photonic crystals
Progress In Electromagnetics Research Symposium 2015 Czech