RQ3N025AT (新製品)
Pch -80V -2.5A, HSMT8, Power MOSFET主な仕様
特性:
Package Code
HSMT8
Applications
Switching
Number of terminal
8
Polarity
Pch
Drain-Source Voltage VDSS[V]
-80
Drain Current ID[A]
-7
RDS(on)[Ω] VGS=6V(Typ)
0.22
RDS(on)[Ω] VGS=10V(Typ)
0.185
RDS(on)[Ω] VGS=Drive (Typ)
0.22
Total gate charge Qg[nC]
8.2
Power Dissipation (PD)[W]
14
Drive Voltage[V]
-6
Trr (Typ)[ns]
28
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
特長:
- 低オン抵抗
- 小型ハイパワーパッケージ(HSMT8)
- 鉛フリー対応済み、RoHS準拠
- ハロゲンフリー
- 100%Rg及びアバランシェ耐量試験済