DTD114GC
NPN, SOT-23, R2内蔵 デジタルトランジスタ (バイアス抵抗内蔵トランジスタ)
DTD114GCは抵抗器内蔵型のトランジスタです。
主な仕様
特性:
Package Code
TO-236AB (SOT-23)
Number of terminal
3
Polarity
NPN
Supply voltage VCC 1[V]
50
Collector current Io (Ic) [A]
0.5
Emitter base Resistance R2 1 [kΩ]
10
Collector-Emitter voltage VCEO1[V]
50
Collector current Io(Ic) [A]
0.5
Power Dissipation (PD)[W]
0.2
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2.4x2.9 (t=1.2)
特長:
- NPN epitaxial planar silicon transistor (Resistor built-in type)
- 内蔵抵抗:R = 10kΩ。
- コンプリメンタリ:DTB114GC(PNPタイプ)
