新規設計非推奨
BD53E41G
4.1V, CMOS出力, 遅延時間可変タイプ ボルテージディテクタ
BD53E41G
新規設計非推奨
BD53E41G
4.1V, CMOS出力, 遅延時間可変タイプ ボルテージディテクタ
既存のお客様をサポートするために生産されている製品です。新規設計にこの製品は販売しておりません。
主な仕様
BD53E41G の代替品
| Part Number |
|
|
|---|---|---|
| Ordering Part Number | BD53E41G-TR | BD5241G-1TR |
| Similar Level | - | ピン配置・パッケージ同等 |
| Data Sheet | ||
| Supply Status | Not Recommended for New Designs | Recommended |
| Package | SSOP5 | SSOP5 |
| Unit Quantity | 3000 | 3000 |
| Minimum Packing Quantity | 3000 | 3000 |
| Packing Type | Taping | Taping |
| RoHS | Yes | Yes |
| Under Voltage Detection Voltage [V] (typ.) | 4.1 | 4.1 |
| VDET Precision [%] | ±1 | ±0.9 |
| Reset Active Voltage Range [V] | 0.95 to 10 | 0.8 to 6 |
| Output Types | CMOS | Open drain |
| Reset Delay Timer | Adjustable Delay | Adjustable Delay |
| Reset Active State | Low | Low |
| Manual Reset | No | No |
| Watchdog Timer | No | No |
| Auto Motive | No | No |
| Circuit Current (ON) [µA] | 0.85(VDET=4.8V) | 0.23 |
| Circuit Current (OFF) [µA] | 0.85(VDET=4.8V) | 0.27 |
| Hysteresis Voltage [V] | VDET x 0.05 | VDET x 0.05 |
| L Output Current (LowVol) [mA] | 1.2 | 1 |
| L Output Current (HighVol) [mA] | 2.4 | 2 |
| Delay Circuit Resistance [MO] | 9.0 | - |
| Additional Feature | Cu wire bonding. | - |
| Temperature (Min.)[°C] | -40 | -40 |
| Temperature (Max.)[°C] | 105 | 85 |
| Package Size [mm] | 2.9x2.8 (t=1.25) | 2.9x2.8 (t=1.25) |
