主な仕様
特性:
Type
Small Type
Gap Width[mm]
4
Slit Width[mm]
0.5
Output Type
Phototransistor
Collector Current(Min.)[mA]
0.2
· VCE[V]@Collector Current
5
· IF[mA]@Collector Current
20
Operating Temperature (Min.)[°C]
-25
Operating Temperature (Max.)[°C]
85
Package Size [mm]
8x4.2 (t=5.2)
特長:
・ギャップ幅4.0mm・小型ディップタイプ
