主な仕様
特性:
Type
Ultraminiature Type
Gap Width[mm]
0.8
Slit Width[mm]
0.4
Output Type
Phototransistor
Collector Current(Min.)[mA]
0.7
· VCE[V]@Collector Current
5
· IF[mA]@Collector Current
20
Operating Temperature (Min.)[°C]
-25
Operating Temperature (Max.)[°C]
85
Package Size [mm]
3.6x2.6 (t=3.3)
特長:
・ギャップ幅1.0mm・超小型ディップタイプ
