RS7G200CG (新製品)
Nch 40V 410A, DFN5060-8S, パワーMOSFET主な仕様
特性:
Package Code
DFN5060-8S
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
40
Drain Current ID[A]
410
RDS(on)[Ω] VGS=4.5V(Typ)
0.00081
RDS(on)[Ω] VGS=10V(Typ)
0.00056
RDS(on)[Ω] VGS=Drive (Typ)
0.00081
Total gate charge Qg[nC]
63
Power Dissipation (PD)[W]
216
Drive Voltage[V]
4.5
Trr (Typ)[ns]
82
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
175
Package Size [mm]
6.0x5.0 (t=1.1)
特長:
- 低オン抵抗
- ハイパワーパッケージ(DFN5060T8LSHAAE)
- 鉛フリー対応済み、RoHS準拠
- ハロゲンフリー
- 100%Rg及びアバランシェ耐量試験済