新規設計非推奨
RJ1P12BBD
Nch 100V 120A パワーMOSFET
RJ1P12BBD
新規設計非推奨
RJ1P12BBD
Nch 100V 120A パワーMOSFET
既存のお客様をサポートするために生産されている製品です。新規設計にこの製品は販売しておりません。
主な仕様
RJ1P12BBD の代替品
| Part Number |
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|
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|---|---|---|---|
| Ordering Part Number | RJ1P12BBDTLL | RJ1P10BBHTL1 | RS6P100BHTB1 |
| Similar Level | - | ピン配置同等 | 類似特性 |
| Data Sheet | |||
| Supply Status | Not Recommended for New Designs | Recommended | Recommended |
| Package | LPTL | TO-263AB-3LSHYAD | HSOP8 (Single,TB1) |
| Unit Quantity | 1000 | 800 | 2500 |
| Minimum Packing Quantity | 1000 | 800 | 2500 |
| Packing Type | Taping | Taping | Taping |
| RoHS | Yes | Yes | Yes |
| Package Code | TO-263AB (D2PAK) | TO-263AB | HSOP8 |
| Package Size [mm] | 15.1x10.1 (t=4.7) | 15.1×10.11 (t=4.77) | 6.0x4.9 (t=1.1) |
| Number of terminal | 3 | 3 | 8 |
| Polarity | Nch | Nch | Nch |
| V DSS [V] | 100 | 100 | 100 |
| I D [A] | 120.0 | 170.0 | 100.0 |
| R DS(on) (Typ) @6V[O] | - | 0.0028 | 0.0058 |
| R DS(on) (Typ) @10V[O] | 0.0044 | 0.0023 | 0.0045 |
| R DS(on) (Typ) @Drive[O] | 0.0052 | 0.0028 | 0.0058 |
| Drive Voltage [V] | 6.0 | 6.0 | 6.0 |
| Power Dissipation (PD) [W] | 178.0 | 189.0 | 104.0 |
| Q g (Typ)[nC] | 51.0 | 89.0 | 29.0 |
| Trr (Typ)[ns] | - | 90 | 63 |
| Mounting Style | Surface mount | Surface mount | Surface mount |
| Applications | - | Switching | - |
| Storage Temperature (Min)[?] | -55 | -55 | -55 |
| Storage Temperature (Max)[?] | 150 | 150 | 150 |
