HT8KA6 (新製品)
30V 15A, Dual Nch+Nch, HSMT8, パワーMOSFET主な仕様
特性:
Package Code
HSMT8
Number of terminal
8
Polarity
Nch+Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
15
RDS(on)[Ω] VGS=4.5V(Typ)
0.012
RDS(on)[Ω] VGS=10V(Typ)
0.0092
Total gate charge Qg[nC]
16.6
Power Dissipation (PD)[W]
16
Drive Voltage[V]
4.5
trr (Typ.)[ns]
115
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
特長:
- 低オン抵抗
- 小型ハイパワーパッケージ(HSMT8)
- 鉛フリー対応済み、RoHS準拠
- ハロゲンフリー
- 100%Rg 及びアバランシェ耐量試験済