S6602
1200V, 10A, SiCショットキーバリアダイオード Bare Die
S6602
主な仕様
特性:
Reverse Voltage[V]
1200
Continuous Forward Current[A]
10
Generation
3rd Gen
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特長:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability