SCT3060AW7
650V 38A, 7端子SMD, トレンチ構造, SiC-MOSFET
SCT3060AW7は650V 38AのNch SiCパワーMOSFETです。トレンチ構造によりオン抵抗を低減しています。
主な仕様
特性:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
60
Generation
3rd Gen (Trench)
Drain Current[A]
38
Total Power Dissipation[W]
159
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.4x10.2 (t=4.7)
特長:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
関連動画&カタログ
