1700V, 4A, SMD, SiC-MOSFET - SCT2H12NY
SCT2H12NYは1700V 4AのNch SiCパワーMOSFETです。
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特性:
VDS [V]
1700
オン抵抗 (typ.)[mΩ]
1150.0
ID [A]
4.0
PD [W]
44
ジャンクション温度 (Max.)[°C]
175
保存温度範囲 (Min.) [°C]
-55
保存温度範囲 (Max.)[°C]
175
特長:
- Low on-resistance
- Fast switching speed
- Long creepage distance with no center lead
- Simple to drive
- Pb-free lead plating; RoHS compliant
