S4007
650V, 30A, SiC-MOSFET Bare Die
S4007
主な仕様
特性:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
3rd Gen
Drain Current[A]
30
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特長:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive