BM61M22BFJ-C
絶縁電圧2500Vrms 絶縁素子内蔵 1chゲートドライバ

絶縁電圧2500Vrms、最大入出力遅延時間60ns、最小入力パルス幅60nsの絶縁素子内蔵ゲートドライバです。低電圧時誤動作防止機能(UVLO)を内蔵しています。

主な仕様

 
形名 | BM61M22BFJ-CE2
供給状況 | 推奨品
パッケージ | SOP-JW8
包装数量 | 2500
最小個装数量 | 2500
包装形態 | テーピング
RoHS | Yes

特性:

グレード

Automotive

標準規格

AEC-Q100 (Automotive Grade)

Isolation Voltage[Vrms]

2500.0

チャンネル数

1

Vcc1(Min.)[V]

4.5

Vcc1(Max.)[V]

5.5

Vcc2(Min.)[V]

9.0

Vcc2(Max.)[V]

24.0

Iout(Max.)[A]

2.0

I/O Delay Time(Max.)[ns]

60

Min. Input Pulse Width[ns]

60

動作温度範囲(Min.)[℃]

-40

動作温度範囲(Max.)[℃]

125

スイッチングコントローラ

No

温度モニタ

No

パッケージサイズ [mm]

6x4.9 (t=1.6)

特長:

  • AEC-Q100対応(Grade1)
  • 絶縁素子内蔵
  • 低電圧時誤動作防止機能
  • UL1577(pending)

評価ボード

 
    • Evaluation Board
    • BM61M22BFJ-EVK001
    • The BM61M22BFJ-EVK001 board can be driving MOSFET and IGBT Power Devices. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 9 to 24 V. The BM61M22BFJ-C has Power Supply protections which are the Under Voltage Lockout (UVLO) function at Input-side and Output-side. The BM61M22BFJ-EVK001 allows designers to evaluate Rohm’s Gate Driver family for various applications.

  • ユーザーガイド 在庫確認
    • Evaluation Board
    • BM61M22BFJ-EVK002
    • The BM61M22BFJ-EVK002 board can be driving two MOSFET and IGBT Power Devices such as for High-side and Low-side on Half Bridge application. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 9 to 24 V. The BM61M22BFJ-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at Input-side and Output-side. The BM61M22BFJ-EVK002 allows designers to evaluate Rohm’s Gate Driver family for various applications.

  • ユーザーガイド 在庫確認