主な仕様
特性:
Type
Ultraminiature Type
Gap Width[mm]
1.2
Slit Width[mm]
0.3
Output Type
Phototransistor
Collector Current(Min.)[mA]
0.45
· VCE[V]@Collector Current
5
· IF[mA]@Collector Current
20
Operating Temperature (Min.)[°C]
-25
Operating Temperature (Max.)[°C]
85
Package Size [mm]
3.6x3.3 (t=2.8)
特長:
・ギャップ幅1.2mm・超小型ディップタイプ
