HP8JB5 (新製品)
-40V 18A, Dual Pch+Pch, HSOP8, パワーMOSFET主な仕様
特性:
Package Code
HSOP8
Number of terminal
8
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-40
Drain Current ID[A]
18
RDS(on)[Ω] VGS=4.5V(Typ)
0.042
RDS(on)[Ω] VGS=10V(Typ)
0.034
RDS(on)[Ω] VGS=Drive (Typ)
0.042
Total gate charge Qg[nC]
9
Power Dissipation (PD)[W]
21
Drive Voltage[V]
-4.5
Trr (Typ)[ns]
26
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.0x4.9 (t=1.1)
特長:
- 低オン抵抗
- ハイパワーパッケージ(HSOP8)
- 鉛フリー対応済み、RoHS準拠
- ハロゲンフリー
- 100% Rg及びアバランシェ耐量試験済