BSM600C12P3G201
1200V, 576A, チョッパ トレンチMOS内蔵 フルSiCパワーモジュール
最終販売
BSM600C12P3G201
1200V, 576A, チョッパ トレンチMOS内蔵 フルSiCパワーモジュール
製造中止を申請中の製品です。
主な仕様
特性:
Drain-source Voltage[V]
1200
Drain Current[A]
576
Total Power Dissipation[W]
2460
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Chopper
Package Size [mm]
152.0x62.0 (t=18.0)
特長:
- 低サージ・低損失
- 高速スイッチング
- 特性の温度依存性が低い
リファレンスデザイン / アプリケーション評価キット
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