SCT2H12NWB (新製品)
1700V, 3.9A, 7端子SMD, SiC-MOSFET主な仕様
特性:
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150
Generation
2nd Gen (Planar)
Drain Current[A]
3.9
Total Power Dissipation[W]
39
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.5x10.2 (t=4.7)
特長:
- Low on-resistance
- Fast switching speed
- Wide creepage distance = 6.1 mm
- Simple to drive
- Pb-free lead plating ; RoHS compliant