SCT2280KEHR
1200V, 14A, THD, 車載用SiC-MOSFET
SCT2280KEHR
1200V, 14A, THD, 車載用SiC-MOSFET
SiCによるプレーナタイプMOSFETです。高耐圧・低オン抵抗・高速スイッチングが特徴です。AEC-Q101に準拠した高信頼性の車載グレード製品です。
主な仕様
特性:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
280
Generation
2nd Gen (Planar)
Drain Current[A]
14
Total Power Dissipation[W]
108
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特長:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101
