SG6610WN
短絡耐量 5µs, 650V 20A, IGBT Bare Die
SG6610WN
主な仕様
特性:
シリーズ
T: For inverter (tsc 5µs)
VCES [V] / VRM [V]
650
IC(Nominal) [A] / IF(Nominal) [A]
20
VCE(sat)(Typ.) [V] / VF(Typ.) [V]
1.65
tsc(Min.) [us]
5
動作温度範囲 (Min.)[℃]
-40
動作温度範囲 (Max.)[℃]
175
特長:
- Trench Light Punch Through Type
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs