最終販売
RGW00TS65D
超高速スイッチングタイプ, 650V 50A, FRD内蔵, TO-247N, Field Stop Trench IGBT
RGW00TS65D
最終販売
RGW00TS65D
超高速スイッチングタイプ, 650V 50A, FRD内蔵, TO-247N, Field Stop Trench IGBT
製造中止を申請中の製品です。
主な仕様
特性:
Series
W: High speed fast SW
VCES [V]
650
IC(100°C)[A]
50
VCE(sat) (Typ.) [V]
1.5
tf(Typ.) [ns]
33
Built-in Diode
FRD
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
20.95x15.94 (t=5.22)
特長:
- Low Collector - Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
