RGTV00TS65D
短絡耐量 2µs, 650V 50A, FRD内蔵, TO-247N, Field Stop Trench IGBT
RGTV00TS65D
短絡耐量 2µs, 650V 50A, FRD内蔵, TO-247N, Field Stop Trench IGBT
RGTV00TS65Dは低VCE(sat)、低スイッチング損失のIGBTです。PFC、ソーラーインバータ、UPS、溶接、IHなどのアプリケーションに最適です。
主な仕様
特性:
Series
TV: For inverter (tsc 2µs)
VCES [V]
650
IC(100°C)[A]
50
VCE(sat) (Typ.) [V]
1.5
tf(Typ.) [ns]
38
tsc(Min.) [us]
2
Built-in Diode
FRD
Pd [W]
276
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
20.95x15.94 (t=5.22)
特長:
- Low Collector - Emitter Saturation Voltage
- High Speed Switching & Low Switching Loss
- Short Circuit Withstand Time 2μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
