主な仕様
特性:
Series
TH: High speed SW
VCES [V]
650
IC(100°C)[A]
25
VCE(sat) (Typ.) [V]
1.6
tf(Typ.) [ns]
50
Built-in Diode
FRD
Pd [W]
174
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.94x20.95 (t=5.02)
特長:
1) Low Collector - Emitter Saturation Voltage2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant