RGT40TS65D
短絡耐量 5µs, 650V 20A, FRD内蔵, TO-247GE, Field Stop Trench IGBT
ロームのIGBT(絶縁ゲート型バイポーラトランジスタ)製品は、幅広い高電圧・大電流アプリケーションの高効率化と省エネルギー化に貢献します。
主な仕様
特性:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
20
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
60
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
144
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
20.95x15.94 (t=5.22)
特長:
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
