RGT20NL65
短絡耐量 5µs, 650V 10A, LPDL, Field Stop Trench IGBT
RGT20NL65
短絡耐量 5µs, 650V 10A, LPDL, Field Stop Trench IGBT
RGT20NL65は低VCE(sat)・低スイッチング損失のIGBTです。インバータ、UPS、パワーコンディショナ、溶接機などのアプリケーションに最適です。
主な仕様
特性:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
10
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
104
tsc(Min.) [us]
5
Pd [W]
106
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.1x10.1 (t=4.7)
特長:
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5μs
- Pb - free Lead Plating ; RoHS Compliant
