RGT16BM65D
短絡耐量 5µs, 650V 8A, FRD内蔵, TO-252, Field Stop Trench IGBT
ロームのIGBT(絶縁ゲート型バイポーラトランジスタ)製品は、幅広い高電圧・大電流アプリケーションの高効率化と省エネルギー化に貢献します。
主な仕様
特性:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
8
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
95
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
94
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.0x6.6 (t=2.3)
特長:
- Low Collector-Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
