RGS00TS65DHR
短絡耐量 8µs, 650V 50A, FRD内蔵, TO-247N, 車載用 Field Stop Trench IGBT
RGS00TS65DHRは低導通損失が特長の車載向けIGBTです。導通損失が重視される、電動コンプレッサのインバータ回路やPTCヒータのスイッチ回路に最適です。AEC-Q101に準拠した高信頼製品です。
主な仕様
特性:
Series
S: For inverter (tsc 8-10µs)
VCES [V]
650
IC(100°C)[A]
50
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
91
tsc(Min.) [us]
8
Built-in Diode
FRD
Pd [W]
326
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特長:
- Low Collector - Emitter Saturation Voltage
- Short Circuit Withstand Time 8μs
- Qualified to AEC-Q101
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
