RGS00TS65DHR
短絡耐量 8µs, 650V 50A, FRD内蔵, TO-247N, 車載用 Field Stop Trench IGBT
RGS00TS65DHR
主な仕様
特性:
標準規格
AEC-Q101 (Automotive Grade)
シリーズ
S: For inverter (tsc 8-10µs)
VCES [V]
650
IC(100℃) [A]
50
VCE(sat)(Typ.) [V]
1.65
tf(Typ.) [ns]
91
tsc(Min.) [us]
8
ダイオード 内蔵
FRD
Pd [W]
326
BVCES(Min.) [V]
650
保存温度範囲 (Min.)[℃]
-55
保存温度範囲 (Max.)[℃]
175
パッケージサイズ [mm]
16x21 (t=5.2)
特長:
- Low Collector - Emitter Saturation Voltage
- Short Circuit Withstand Time 8μs
- Qualified to AEC-Q101
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
