主な仕様
特性:
Series
C: Reverse Conducting
VCES [V]
1800
IC(100°C)[A]
40
VCE(sat) (Typ.) [V]
2.2
tf(Typ.) [ns]
55
Built-in Diode
FRD
BVCES (Min.)[V]
1800
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
特長:
- Low Collector - Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Monolithic Body Diode with Low Forward Voltage
- Pb - free Lead Plating ; RoHS Compliant