SCZ4006KTB
DOT-247 (2-in-1), 1200V, 209A, コモンソース SiCパワーモジュール主な仕様
特性:
Drain-source Voltage[V]
1200
Drain Current[A]
209
Total Power Dissipation[W]
704
Drain-source On-state Resistance(Typ.)[mΩ]
6
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Common-Source
Package Size [mm]
26.45x31.5 (t=5.25)
特長:
- DOT247 package with the 4th Generation SiC-MOSFET
- VDSS = 1200V
- Low RDS(on)
- High-speed switching possible
- Low switching losses
- Tvjmax = 175°C
- Compact design
- High power density