主な仕様
特性:
VDS [V]
1200
ID [A]
576
PD [W]
2450
ジャンクション温度 (Max.)[℃]
175
保存温度範囲 (Min.) [℃]
-40
保存温度範囲 (Max.)[℃]
125
内部回路
Half bridge
パッケージサイズ [mm]
152x62 (t=18)
特長:
- 低サージ・低損失
- 高速スイッチング
- 特性の温度依存性が低い
リファレンスデザイン / アプリケーション評価キット
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
