RGTV80TS65D
短絡耐量 2µs, 650V 40A, FRD内蔵, TO-247N, Field Stop Trench IGBT
RGTV80TS65D
主な仕様
特性:
シリーズ
TV: For inverter (tsc 2µs)
VCES [V]
650
IC(100℃) [A]
40
VCE(sat)(Typ.) [V]
1.5
tf(Typ.) [ns]
45
tsc(Min.) [us]
2
ダイオード 内蔵
FRD
BVCES(Min.) [V]
650
保存温度範囲 (Min.)[℃]
-55
保存温度範囲 (Max.)[℃]
175
パッケージサイズ [mm]
16x21 (t=5.2)
特長:
- Low Collector - Emitter Saturation Voltage
- High Speed Switching & Low Switching Loss
- Short Circuit Withstand Time 2μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
