ICSCRM 2019

Information

Date: September 29 - October 4, 2019
Venue : Annex Hall, Kyoto International Conference Center
Website : http://www.icscrm2019.org/

ICSCRM 2019

Featured Products

  • SiC Schottky Barrier Diodes
  • SiC MOSFET
  • SiC Power Module
  • AC/DC Converter Ics
  • Power Devices Demo Set
  • SiC MOSFET EVA board
  • R&D
    ROHM R&D https://www.rohm.co.jp/r-and-d (Japanese)

ROHM Special Conference & Welcome Party (1st October)

Special Conference

Research and Development of SiC Power Devices
Prof. Hiroyuki Matsunami
Venue : Kyoto International Conference Center RoomD
Date: October 1, 2019
Time : 18:25~19:15
Advance registration-free

Welcome Party

Venue : Kyoto International Conference Center
Banquet Hall Swan
Date: October 1, 2019
Time : 19:30~21:30
Advance registration-free

ROHM Special Conference & Welcome Party

ROHM Special Conference Agenda

18:30 - 18:45  Latest Status of ROHM’s SiC Power Devices

Kazuhide Ino, Ph.D.
Corporate Officer
Director of Power Device Production Headquarters
ROHM Co., Ltd.

18:45 - 19:15  Research and Development of SiC Power Devices

Prof. Hiroyuki Matsunami
Kyoto Univ.
Prof. Hiroyuki Matsunami

  • 1962 : Bachelor degree from Kyoto University
  • 1964 : Master degree from Kyoto University
  • 1964 : Research Associate in Kyoto University
  • 1970 : Doctor degree from Kyoto University
  • 1971 : Associate Professor in Kyoto University
  • 1976 – 1977 : Visiting Associate Professor in North Carolina State University, U.S.A
  • 1983 : Professor in Kyoto University
  • 1987 : Technology development of Step-controlled epitaxy
  • 2000 : Undertook joint studies with ROHM
  • 2003 : Retired from Kyoto University, Professor Emeritus
  • 2004 – 2012 : Director of JST Innovation Plaza Kyoto
  • 2013 : Asahi Prize 2012 (for Pioneering Research of Power Semiconductor SiC)
  • 2016 : IEEE David Sarnoff Award
  • 2017 : Honda Prize 2017