Information
Date: September 29 - October 4, 2019
Venue : Annex Hall, Kyoto International Conference Center
Website : http://www.icscrm2019.org/
Featured Products
- SiC Schottky Barrier Diodes
- SiC MOSFET
- SiC Power Module
- AC/DC Converter Ics
- Power Devices Demo Set
- SiC MOSFET EVA board
- R&D
ROHM R&D https://www.rohm.co.jp/r-and-d (Japanese)
ROHM Special Conference & Welcome Party (1st October)
Special Conference
Research and Development of SiC Power Devices
Prof. Hiroyuki Matsunami
Venue : Kyoto International Conference Center RoomD
Date: October 1, 2019
Time : 18:25～19:15
Advance registration-free
Welcome Party
Venue : Kyoto International Conference Center
Banquet Hall Swan
Date: October 1, 2019
Time : 19:30～21:30
Advance registration-free
ROHM Special Conference Agenda
18:30 - 18:45 Latest Status of ROHM’s SiC Power Devices
Kazuhide Ino, Ph.D.
Corporate Officer
Director of Power Device Production Headquarters
ROHM Co., Ltd.
18:45 - 19:15 Research and Development of SiC Power Devices
Prof. Hiroyuki Matsunami
Kyoto Univ. 
- 1962 : Bachelor degree from Kyoto University
- 1964 : Master degree from Kyoto University
- 1964 : Research Associate in Kyoto University
- 1970 : Doctor degree from Kyoto University
- 1971 : Associate Professor in Kyoto University
- 1976 – 1977 : Visiting Associate Professor in North Carolina State University, U.S.A
- 1983 : Professor in Kyoto University
- 1987 : Technology development of Step-controlled epitaxy
- 2000 : Undertook joint studies with ROHM
- 2003 : Retired from Kyoto University, Professor Emeritus
- 2004 – 2012 : Director of JST Innovation Plaza Kyoto
- 2013 : Asahi Prize 2012 (for Pioneering Research of Power Semiconductor SiC)
- 2016 : IEEE David Sarnoff Award
- 2017 : Honda Prize 2017