S4007
650V, 30A, SiC-MOSFET Bare Die
S4007
主な仕様
特性:
VDS [V]
650
オン抵抗 (typ.)[mΩ]
80
世代
3rd Gen
ID [A]
30
ジャンクション温度 (Max.)[℃]
175
保存温度範囲 (Min.) [℃]
-55
保存温度範囲 (Max.)[℃]
175
特長:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive