主な仕様
特性:
シリーズ
TH: High speed SW
VCES [V]
650
IC(100℃) [A]
21
VCE(sat)(Typ.) [V]
1.6
tf(Typ.) [ns]
50
ダイオード 内蔵
FRD
Pd [W]
72
BVCES(Min.) [V]
650
保存温度範囲 (Min.)[℃]
-55
保存温度範囲 (Max.)[℃]
175
パッケージサイズ [mm]
16x21 (t=5.2)
特長:
- Low Collector-Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
